Abstract
The effect of neutron radiation on the luminescence of InGaAs/GaAs heterostructures with quantum wells and quantum dots is studied. It is found that neutron radiation results both in the formation of defects and in the radiation-induced annealing of growth-related defects. Quantum dots are more stable to neutron radiation in comparison with quantum wells. It is shown that the layer of InGaAs/GaAs quantum dots located near the surface is less sensitive to irradiation with neutrons compared with a similar layer located in the bulk. In the first case, one can observe an increase in the photoluminescence and electroluminescence intensities after irradiation with neutrons, which is related to the effects of radiation-induced annealing. The pronounced effect of elastic strains in the InGaAs/GaAs quantum wells on the extent of quenching of the photoluminescence intensity upon irradiation with neutrons is revealed. In heterostructures with quantum wells, the effect of radiation-induced annealing manifests itself in a shift of the photoluminescence peak to longer wavelengths as a result of a decrease in elastic strains upon irradiation with neutrons. Doping of the GaAs buffer layer with silicon also reduces the value of this spectral shift.
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Original Russian Text © N.V. Baidus, O.V. Vikhrova, B.N. Zvonkov, E.I. Malysheva, A.N. Trufanov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 3, pp. 370–375.
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Baidus, N.V., Vikhrova, O.V., Zvonkov, B.N. et al. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons. Semiconductors 49, 358–363 (2015). https://doi.org/10.1134/S1063782615030057
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DOI: https://doi.org/10.1134/S1063782615030057