Abstract
It is experimentally found that an ohmic contact based on Au-Pt-Ti-Pd-n +-Si metallization is formed due to nanoscale metal shunts containing Si, Au, and Pt in the region of the interface with n +-Si, which appears during heat treatment at T = 450°C for 10 min in a vacuum chamber with a residual pressure of 10−6 Torr. The high density of shunts adjoining dislocations and other imperfections is confirmed by the temperature dependence of the specific contact resistance ρ c (T). The density of conductive dislocations, calculated from the temperature dependence of ρ c is ∼5 × 109 cm−2 which correlates with the density of structural defects, determined by the etch pits after removal of the metallization layers.
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Original Russian Text © A.V. Sachenko, A.E. Belyaev, V.A. Pilipenko, T.V. Petlitskaya, V.A. Anischik, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 509–513.
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Sachenko, A.V., Belyaev, A.E., Pilipenko, V.A. et al. Current flow through metal shunts in ohmic contacts to n +-Si. Semiconductors 48, 492–496 (2014). https://doi.org/10.1134/S1063782614040241
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DOI: https://doi.org/10.1134/S1063782614040241