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Induced transition from Schottky to ohmic contact in In/n-type Si owing to (NH4)2Sx treatment

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Abstract

Indium metal is deposited on n-type Si (n-Si) samples with/without (NH4)2Sx treatment in order to experimentally study the mechanism for the transition from Schottky to ohmic contact. Indium metal that is deposited on a n-Si sample that is subject to (NH4)2Sx treatment shows ohmic behavior but indium metal that is deposited on a n-Si sample that is not subject to (NH4)2Sx treatment exhibits Schottky behavior. Using the transmission line method, the specific contact resistance of the In/(NH4)2Sx treated n-Si structure is calculated to be 283.3 mΩ cm2. Experimental identification confirms that the transformation to conduction behavior occurs because of the combined effect of broken Si–O bonds (i.e., the removal of the native oxide) and the formation of Si–Sx2− bonds at the Si surface, which results in a transition from upward to downward surface band bending for n-Si.

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Acknowledgements

The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 109-2112-M-018-005) in the form of grants.

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Authors and Affiliations

  1. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Xiu-Yu Lin & Yow-Jon Lin

  2. Department of Automatic Control Engineering, Feng Chia University, Taichung, 407, Taiwan

    Hsing-Cheng Chang

  3. Department of Physics, National Changhua University of Education, Changhua, 500, Taiwan

    Bo-Lin Huang

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  1. Xiu-Yu Lin
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  2. Hsing-Cheng Chang
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  4. Yow-Jon Lin
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Correspondence to Yow-Jon Lin.

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Lin, XY., Chang, HC., Huang, BL. et al. Induced transition from Schottky to ohmic contact in In/n-type Si owing to (NH4)2Sx treatment. Indian J Phys 96, 3137–3141 (2022). https://doi.org/10.1007/s12648-021-02235-6

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  • DOI: https://doi.org/10.1007/s12648-021-02235-6

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