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Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range

  • Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation)
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Abstract

The magnetoabsorption and photoconductivity spectra are investigated in the terahertz (THz) range at a temperature of T = 4.2 K for n-Hg1 − x Cd x Te bulk epitaxial layers of various compositions (both semiconductor and semimetallic) grown by molecular-beam epitaxy. Within the framework of the Kane 8 · 8 model, the electron and hole Landau levels are calculated. It is shown that, in contrast to the results of previous investigations, all observed resonance lines are related to transitions between the Landau levels of free carriers (the cyclotron resonance in the conduction band and the transitions between heavy-hole and electron Landau levels), which is evidence of the high purity and structural perfection of the samples. The possibility of using zero-gap Hg1 − x Cd x Te solid solutions as THz photodetectors tunable by magnetic field is shown.

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Authors and Affiliations

  1. Institute of the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    A. V. Ikonnikov, M. S. Zholudev & V. I. Gavrilenko

  2. Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    A. V. Ikonnikov & V. I. Gavrilenko

  3. Rzhanov Institute of Semiconductors, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    N. N. Mikhailov & S. A. Dvoretskii

Authors
  1. A. V. Ikonnikov
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  2. M. S. Zholudev
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  3. V. I. Gavrilenko
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  4. N. N. Mikhailov
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  5. S. A. Dvoretskii
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Correspondence to A. V. Ikonnikov.

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Original Russian Text © A.V. Ikonnikov, M.S. Zholudev, V.I. Gavrilenko, N.N. Mikhailov, S.A. Dvoretskii, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 12, pp. 1569–1574.

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Ikonnikov, A.V., Zholudev, M.S., Gavrilenko, V.I. et al. Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range. Semiconductors 47, 1545–1550 (2013). https://doi.org/10.1134/S1063782613120099

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  • DOI: https://doi.org/10.1134/S1063782613120099

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