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On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation

  • XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
  • Published:
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Abstract

The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    A. V. Ikonnikov, L. S. Bovkun, V. V. Rumyantsev, S. S. Krishtopenko, V. Ya. Aleshkin, A. M. Kadykov, V. I. Gavrilenko & S. V. Morozov

  2. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    A. V. Ikonnikov, V. V. Rumyantsev, V. Ya. Aleshkin, V. I. Gavrilenko & S. V. Morozov

  3. Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA, Grenoble, FR-38042, France

    L. S. Bovkun, M. Orlita & M. Potemski

  4. Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM, Montpellier, 34095, France

    S. S. Krishtopenko & A. M. Kadykov

  5. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    S. A. Dvoretsky & N. N. Mikhailov

  6. Novosibirsk State University, Novosibirsk, 630090, Russia

    N. N. Mikhailov

Authors
  1. A. V. Ikonnikov
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  2. L. S. Bovkun
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  3. V. V. Rumyantsev
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  4. S. S. Krishtopenko
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  5. V. Ya. Aleshkin
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  6. A. M. Kadykov
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  7. M. Orlita
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  8. M. Potemski
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  9. V. I. Gavrilenko
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  10. S. V. Morozov
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  11. S. A. Dvoretsky
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  12. N. N. Mikhailov
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Corresponding author

Correspondence to A. V. Ikonnikov.

Additional information

Original Russian Text © A.V. Ikonnikov, L.S. Bovkun, V.V. Rumyantsev, S.S. Krishtopenko, V.Ya. Aleshkin, A.M. Kadykov, M. Orlita, M. Potemski, V.I. Gavrilenko, S.V. Morozov, S.A. Dvoretsky, N.N. Mikhailov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 12, pp. 1588–1593.

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Ikonnikov, A.V., Bovkun, L.S., Rumyantsev, V.V. et al. On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation. Semiconductors 51, 1531–1536 (2017). https://doi.org/10.1134/S1063782617120090

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  • DOI: https://doi.org/10.1134/S1063782617120090

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