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Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu3+ and Sm3+. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>1023 photons cm−2 s−1) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. M. Mezdrogina

  2. St. Petersburg State Polytechnical University, St. Petersburg, 195021, Russia

    Yu. V. Kozhanova

Authors
  1. M. M. Mezdrogina
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  2. Yu. V. Kozhanova
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Correspondence to M. M. Mezdrogina.

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Original Russian Text © M.M. Mezdrogina, Yu.V. Kozhanova, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 4, pp. 480–489.

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Mezdrogina, M.M., Kozhanova, Y.V. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm. Semiconductors 47, 501–510 (2013). https://doi.org/10.1134/S1063782613040167

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  • DOI: https://doi.org/10.1134/S1063782613040167

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