Skip to main content
SpringerLink
Log in

Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra

  • SURFACES, INTERFACES, AND THIN FILMS
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The results of studies of the surface morphology, electrical characteristics, and photoluminescence properties of epitaxial GaAs films grown by molecular-beam epitaxy on GaAs(110) substrates and doped with Si are reported. A series of samples is grown at a temperature of 580°C with the arsenic/gallium flow ratio in the range from 14 to 80. By analyzing the photoluminescence spectra of the samples, the behavior of Si atoms in GaAs is interpreted with consideration for the occupation of Ga or As sites by Si atoms (i.e., for the formation of SiGa and SiAs point defects) and the formation of vacancies of arsenic and gallium VAs and VGa. In the analysis, the photoluminescence spectra of the samples on (110)-oriented substrates are compared with the photoluminescence spectra of similar samples on (100)- and (111)A-oriented substrates.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.

Similar content being viewed by others

REFERENCES

  1. D. M. Holmes, E. S. Tok, J. L. Sudijono, T. S. Jones, and B. A. Joyce, J. Cryst. Growth 192, 33 (1998).

    Article  ADS  Google Scholar 

  2. C. D. Yerino, B. Liang, D. L. Huffaker, P. J. Simmonds, and M. L. Lee, J. Vac. Sci. Technol. B 35, 010801 (2017).

    Article  Google Scholar 

  3. E. Cruz-Hernández, D. Vázquez-Cortés, S. Shimomura, V. H. Méndez-Garcia, and M. López-López, Phys. Status Solidi C 8, 282 (2011).

    Article  ADS  Google Scholar 

  4. V.-H. Mendez-Garcia, S. Shimomura, A. Yu. Gorbatchev, E. Cruz-Hernández, and D. Vázquez-Cortées, J. Cryst. Growth 425, 85 (2015).

    Article  ADS  Google Scholar 

  5. D. Sun and E. Towe, Jpn. J. Appl. Phys. 33 (pt 1, No. 1B), 702 (1994).

  6. P. O. Vaccaro, K. Tominaga, M. Hosoda, K. Fujita, and T. Watanabe, Jpn. J. Appl. Phys. 34 (pt 1, No. 2B), 1362 (1995).

  7. M. Ilg, K. H. Ploog, and A. Trampert, Phys. Rev. B 50, 17111 (1994).

    Article  ADS  Google Scholar 

  8. T. Ohachi, J. M. Feng, K. Asai, M. Uwani, M. Tateuchi, P. O. Vaccaro, and K. Fujita, Microelectron. J. 30, 471 (1999).

    Article  Google Scholar 

  9. F. Fischer, D. Schuh, M. Bichler, G. Abstreiter, M. Grayson, and K. Neumaier, Appl. Phys. Lett. 86, 192106 (2005).

    Article  ADS  Google Scholar 

  10. T. C. Zhou, X. C. Zhou, and W. P. Kirk, J. Appl. Phys. 81, 7372 (1997).

    Article  ADS  Google Scholar 

  11. E. S. Tok, J. H. Neave, M. J. Ashwin, B. A. Joyce, and T. S. Jones, J. Appl. Phys. 83, 4160 (1998).

    Article  ADS  Google Scholar 

  12. D. Sun and E. Towe, J. Cryst. Growth 132, 166 (1993).

    Article  ADS  Google Scholar 

  13. Y. Takano, M. Lopez, T. Torihata, T. Ikei, Y. Kanaya, K. Pak, and H. Yonezu, J. Cryst. Growth 111, 216 (1991).

    Article  ADS  Google Scholar 

  14. B. Lee, S. S. Bose, M. H. Kim, A. D. Reed, G. E. Stillman, W. I. Wang, L. Vina, and P. C. Colter, J. Cryst. Growth 96, 27 (1989).

    Article  ADS  Google Scholar 

  15. F. Piazza, L. Pavesi, M. Henini, and D. Johnston, Semicond. Sci. Technol. 7, 1504 (1992).

    Article  ADS  Google Scholar 

  16. D. Johnston, L. Pavesi, and M. Henini, Microelectron. J. 26, 759 (1995).

    Article  Google Scholar 

  17. G. Galiev, V. Kaminskii, D. Milovzorov, I. Velihovskii, and V. Mokerov, Semicond. Sci. Technol. 17, 120 (2002).

    Article  ADS  Google Scholar 

  18. L. Pavesi, M. Henini, and D. Johnston, Appl. Phys. Lett. 66, 2846 (1995).

    Article  ADS  Google Scholar 

  19. A. Miyagawa, T. Yamamoto, Y. Ohnishi, J. T. Nelson, and T. Ohachi, J. Cryst. Growth 237–239, 1434 (2002).

  20. G. B. Galiev, E. A. Klimov, A. N. Klochkov, S. S. Pushkarev, and P. P. Mal’tsev, Semiconductors 52, 376 (2018).

    Article  ADS  Google Scholar 

  21. W. I. Wang, J. Vac. Sci. Technol. B 1, 630 (1983). https://doi.org/10.1116/1.582567

    Article  Google Scholar 

Download references

Funding

The study was supported by the Russian Foundation for Basic Research, project no. 18-32-20207 mol_a_ved.

Author information

Authors and Affiliations

  1. Mokerov Institute of Ultrahigh-Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    G. B. Galiev, E. A. Klimov & S. S. Pushkarev

  2. National Research University of Electronic Technology “MIET”, 124498, Moscow, Russia

    A. A. Zaytsev

  3. National Research Nuclear University “MEPhI”, 115409, Moscow, Russia

    A. N. Klochkov

Authors
  1. G. B. Galiev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. E. A. Klimov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. S. Pushkarev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. A. Zaytsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. N. Klochkov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. S. Pushkarev.

Ethics declarations

The authors declare that they have no conflict of interest.

Additional information

Translated by E. Smorgonskaya

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Galiev, G.B., Klimov, E.A., Pushkarev, S.S. et al. Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra. Semiconductors 54, 1417–1423 (2020). https://doi.org/10.1134/S1063782620110093

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782620110093

Keywords:

Search

Navigation