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Structural and optical properties of heavily doped Al x Ga1 − x As1 − y P y :Mg alloys produced by metal-organic chemical vapor deposition

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Abstract

The high-resolution X-ray diffraction technique, Raman spectroscopy, and photoluminescence spectroscopy are used to study the structural, optical, and electron energy properties of epitaxial Al x Ga1 − x As1 − y P y :Mg alloy films grown by metal-organic chemical vapor deposition (MOCVD). It is shown that the introduction of a Mg impurity into the quaternary alloy provides high charge-carrier concentrations. A decrease in the growth temperature yields a decrease in the charge-carrier concentration in films doped with magnesium at a small gas-carrier flux of the acceptor impurity, whereas an increase in the flux results in an increase in the acceptor-impurity concentration, which is reflected in the character of the photoluminescence spectra.

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Authors and Affiliations

  1. Voronezh State University, Voronezh, 394006, Russia

    P. V. Seredin, A. S. Lenshin & A. V. Glotov

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. N. Arsentyev, D. A. Vinokurov & I. S. Tarasov

  3. Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, 3417, Col San Miguel Hueyotlipan, Puebla, 72050, Mexico

    T. Prutskij

  4. Karlsruhe Nano Micro Facility, Eggenstein-Leopoldshafen, 76344, Germany

    H. Leiste & M. Rinke

Authors
  1. P. V. Seredin
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  2. A. S. Lenshin
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  3. A. V. Glotov
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  4. I. N. Arsentyev
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  5. D. A. Vinokurov
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  6. I. S. Tarasov
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  7. T. Prutskij
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  8. H. Leiste
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  9. M. Rinke
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Correspondence to P. V. Seredin.

Additional information

Original Russian Text © P.V. Seredin, A.S. Lenshin, A.V. Glotov, I.N. Arsentyev, D.A. Vinokurov, I.S. Tarasov, T. Prutskij, H. Leiste, M. Rinke, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 8, pp. 1123–1131.

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Seredin, P.V., Lenshin, A.S., Glotov, A.V. et al. Structural and optical properties of heavily doped Al x Ga1 − x As1 − y P y :Mg alloys produced by metal-organic chemical vapor deposition. Semiconductors 48, 1094–1102 (2014). https://doi.org/10.1134/S1063782614080211

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  • DOI: https://doi.org/10.1134/S1063782614080211

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