Abstract
The Monte Carlo method is used for calculating the distributions of the electric field, potential, and interband-tunneling probability over the area of a reverse-biased p-n junction, taking into account the discreteness of the charge distribution of ionized donors and acceptors. The calculations are carried out in a three-dimensional approximation on the basis of the principle of superposition of the electric fields of “ionized-donor-ionized-acceptor” ion pairs. It is shown that, in the region of clusters of three or more ion pairs with the characteristic distance of about half of the de-Broglie wavelength between them, an increase in the tunneling probability related to a local increase in the electric-field strength is observed.
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Original Russian Text © V.A. Kozlov, S.V. Obolensky, V.B. Shmagin, Z.F. Krasilnik, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 1, pp. 134–139.
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Kozlov, V.A., Obolensky, S.V., Shmagin, V.B. et al. Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon p-n junction. Semiconductors 46, 130–135 (2012). https://doi.org/10.1134/S1063782612010137
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DOI: https://doi.org/10.1134/S1063782612010137