Abstract—In this article, we studied the growth characteristics of AlN epitaxial layers on 3С-SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was used to study the morphology of the resulting structures. The minimum roughness was achieved at a growth rate of 150 nm/h on on-axis templates, and at 90 nm/h on off-axis templates. Epitaxial layers of hexagonal AlN with root mean square roughness of less than 3 nm were obtained on 3С-SiC/Si(111) templates with a diameter of 100 mm, in which there was no grain structure. Single-crystal AlN (0002) layers with FWHM (ω‑geometry) values of about 1.4° were obtained.
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This work was financially supported by the Innovation Assistance Fund, agreement no. 1ГТС1/48804.
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Translated by I.K. Katuev
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Babaev, A.V., Nevolin, V.K., Statsenko, V.N. et al. Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy On 3C-SiC/Si(111) Templates with On-Axis and 4° Off-Axis Disorientation. Mech. Solids 55, 84–89 (2020). https://doi.org/10.3103/S0025654420010045
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DOI: https://doi.org/10.3103/S0025654420010045