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High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss

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Abstract

The main results of the studies on designing high-power semiconductor laser diodes based on asymmetric semiconductor heterostructures InGaAs(P)/Al(In)GaAs(P)/GaAs with low internal optical loss, whose concept was proposed at the Ioffe Institute, are described in detail. The basic technological approaches to designing highly strained active laser media for the spectral range up to 1100 nm are considered. The results of studying the cw high-power multimode semiconductor lasers, emitting in the wavelength ranges of 780–850, 900–980, and 1000–1100 nm; high-power pulsed semiconductor lasers; and high-power lasers with a very wide emitting aperture are considered. The key factors, determining the saturation of the output optical power of high-power semiconductor lasers, are determined.

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Funding

This study was supported by the Russian Science Foundation (project no. 19-79-30072).

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. O. Slipchenko, D. A. Veselov, V. V. Zolotarev, A. V. Lyutetskii, A. A. Podoskin, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, P. S. Kop’ev & N. A. Pikhtin

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  1. S. O. Slipchenko
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  2. D. A. Veselov
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  3. V. V. Zolotarev
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  6. Z. N. Sokolova
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Correspondence to S. O. Slipchenko.

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Translated by Yu. Sin’kov

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Slipchenko, S.O., Veselov, D.A., Zolotarev, V.V. et al. High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss. Bull. Lebedev Phys. Inst. 50 (Suppl 4), S494–S512 (2023). https://doi.org/10.3103/S1068335623160108

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