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Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

  • Physics of Semiconductor Devices
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Abstract

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

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Authors and Affiliations

  1. Institute of Ultrahigh-Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    G. B. Galiev, S. S. Pushkarev, E. A. Klimov & P. P. Maltsev

  2. Moscow Technological University “MIREA”, Moscow, 119454, Russia

    A. M. Buriakov, V. R. Bilyk & E. D. Mishina

  3. National Research Nuclear University “MEPhI”, Moscow, 115409, Russia

    I. S. Vasil’evskii

Authors
  1. G. B. Galiev
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  2. S. S. Pushkarev
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  3. A. M. Buriakov
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  4. V. R. Bilyk
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  5. E. D. Mishina
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  6. E. A. Klimov
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  7. I. S. Vasil’evskii
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  8. P. P. Maltsev
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Corresponding author

Correspondence to S. S. Pushkarev.

Additional information

Original Russian Text © G.B. Galiev, S.S. Pushkarev, A.M. Buriakov, V.R. Bilyk, E.D. Mishina, E.A. Klimov, I.S. Vasil’evskii, P.P. Maltsev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 4, pp. 529–534.

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Galiev, G.B., Pushkarev, S.S., Buriakov, A.M. et al. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates. Semiconductors 51, 503–508 (2017). https://doi.org/10.1134/S1063782617040054

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  • DOI: https://doi.org/10.1134/S1063782617040054

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