Skip to main content
SpringerLink
Log in

Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of diodes with the Schottky barrier M/(SiC)1–x(AlN) x and those of heterojunctions based on SiC and its solid solutions taking into account Φg ≈ ΦB. The results of calculations of the Schottky-barrier heights are consistent with the experimental data obtained from measurements of the photocurrent for metals (M): Al, Ti, Cr, and Ni. The I–V characteristics in the composite–additive model of charge transport agree with the experimental data for the n-M/p-(SiC)1–x(AlN) x and n-6H-SiC/p-(SiC)0.85(AlN)0.15 systems.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Yu. Davydov, A. A. Lebedev, and S. K. Tikhonov, Semiconductors 31, 503 (1997).

    Article  ADS  Google Scholar 

  2. S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov, Semiconductors 35, 1375 (2001).

    Article  ADS  Google Scholar 

  3. A. I. Lebedev, Physics of Semiconductor Devices (Fizmatlit, Moscow, 2008) [in Russian].

    Google Scholar 

  4. N. P. Ismailova, N. V. Ofitserova, and G. K. Safaraliev, Monitoring. Nauka Tekhnol., No. 1, 117 (2009).

    Google Scholar 

  5. G. K. Safaraliev, Solid Solutions Based on Silicon Carbide (Fizmatlit, Moscow, 2011) [in Russian].

    Google Scholar 

  6. V. I. Altukhov, A. V. Sankin, M. N. Dyadyuk, K. S. Kas’yanenko, O. A. Mityugova, and S. V. Filipova, Obozren. Prikl. Prom. Mat. 19, 423 (2012).

    Google Scholar 

  7. V. I. Altuhov, I. S. Kasyanenko, A. V. Sankin, B. A. Bilalov, and A. S. Sigov, Semiconductors 50, 1168 (2016).

    Article  ADS  Google Scholar 

  8. G. K. Safaraliev, N. K. Kargin, M. K. Kurbanov, B. A. Bilalov, Sh. M. Ramazanov, and A. S. Gusev, Vestn. NIYaU MIFI 3 (1), 63 (2014).

    Google Scholar 

  9. F. Shubert, Light Emitting Diodes (Fizmatlit, Moscow, 2008; Cambridge Univ. Press, Cambridge, 2006).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. North-Caucasian Federal University, Stavropol, 355009, Russia

    V. I. Altukhov, A. V. Sankin, D. K. Sysoev & E. G. Yanukyan

  2. Moscow Institute of Radioelectronics and Automation, Moscow, 119454, Russia

    A. S. Sigov

  3. Pyatigorsk Medical and Pharmaceutical Institute, Pyatigorsk, 357500, Russia

    S. V. Filippova

Authors
  1. V. I. Altukhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. V. Sankin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. S. Sigov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. K. Sysoev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. G. Yanukyan
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. V. Filippova
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. I. Altukhov.

Additional information

Original Russian Text © V.I. Altukhov, A.V. Sankin, A.S. Sigov, D.K. Sysoev, E.G. Yanukyan, S.V. Filippova, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 3, pp. 366–369.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Altukhov, V.I., Sankin, A.V., Sigov, A.S. et al. Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model. Semiconductors 52, 348–351 (2018). https://doi.org/10.1134/S106378261803003X

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106378261803003X

Search

Navigation