Abstract
AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.
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Original Russian Text © V.V. Lundin, A.V. Sakharov, E.E. Zavarin, D.A. Zakgeim, A.E. Nikolaev, P.N. Brunkov, M.A. Yagovkina, A.F. Tsatsul’nikov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 13, pp. 51–58.
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Lundin, V.V., Sakharov, A.V., Zavarin, E.E. et al. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas. Tech. Phys. Lett. 44, 577–580 (2018). https://doi.org/10.1134/S1063785018070106
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DOI: https://doi.org/10.1134/S1063785018070106