Abstract
The properties of multiple-junction solar cells depend on the properties of the constituent photovoltaic and tunneling p-n junctions. In this study, the properties of the space-charge region for photovoltaic and tunneling p-n junctions were examined using the dark current-voltage characteristics for two semiconductors: GaSb (a narrow-gap semiconductor) and GaAs (a wide-gap semiconductor). The effects of irradiation with protons (the energy of 6.78 MeV and the maximum fluence of 3 × 1012 cm−2), electrons (the energy of 1 MeV and the maximum fluence of 3 × 1016 cm−2), and γ-ray photons (the energy of 1.17–1.33 MeV and the maximum dose of 17 Mrad) on the lifetime of charge carriers in the space-charge region of photovoltaic p-n junctions and on the peak current of connecting tunneling p-n junctions were studied. The coefficients of the damage for the inverse lifetime are determined for photovoltaic p-n junctions. The coefficients of equivalence between the used types of radiation are determined; these coefficients are found to be almost independent, on the order of magnitude, of the type and material of the p-n-junction (and nearly equal for photovoltaic GaAs p-n junctions and tunneling GaAs and GaSb p-n junctions).
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Original Russian Text © V.M. Andreev, V.V. Evstropov, V.S. Kalinovskiℝ, V.M. Lantratov, V.P. Khvostikov, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 6, pp. 756–760.
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Andreev, V.M., Evstropov, V.V., Kalinovskiĭ, V.S. et al. The effect of damaging radiation (p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions. Semiconductors 41, 732–736 (2007). https://doi.org/10.1134/S1063782607060231
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DOI: https://doi.org/10.1134/S1063782607060231