Skip to main content
SpringerLink
Log in

Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In0.4Ga0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In0.4Ga0.6As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.

Similar content being viewed by others

REFERENCES

  1. S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil’ev, E. S. Semenova, V. M. Ustinov, M. M. Kulagina, E. V. Nikitina, I. P. Soshnikov, Y. M. Shernyakov, D. A. Livshits, N. V. Kryjanovskaya, D. S. Sizov, et al., Semiconductors 36, 1315 (2002).

    Article  ADS  Google Scholar 

  2. S. S. Mikhrin, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, D. A. Livshits, N. N. Ledentsov, Yu. M. Shernyakov, I. I. Novikov, M. V. Maximov, V. M. Ustinov, and Zh. I. Alferov, Semicond. Sci. Technol. 20, 340 (2005).

    Article  ADS  Google Scholar 

  3. D. Alonso-Alvarez, T. Thomas, M. Fuhrer, N. P. Hylton, N. J. Ekins-Daukes, D. Lackner, S. P. Philipps, A. W. Bett, H. Sodabanlu, H. Fujii, K. Watanabe, M. Sugiyama, L. Nasi, and M. Campanini, Appl. Phys. Lett. 105, 083124 (2014).

    Article  ADS  Google Scholar 

  4. M. Sugiyama, H. Fujii, T. Katoh, K. Toprasertpong, H. Sodabanlu, K. Watanabe, D. Alonso-Álvarez, N. J. Ekins-Daukes, and Y. Nakano, in Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition, Sept. 14–18, Hamburg, Germany, 2015, p. 42.

  5. S. A. Mintairov, N. A. Kalyuzhnyy, V. M. Lantratov, M. V. Maximov, A. M. Nadtochiy, S. Rouvimov, and A. E. Zhukov, Nanotechnology 26, 385202 (2015).

    Article  ADS  Google Scholar 

  6. M. A. Mintairov, N. A. Kalyuzhnyy, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, M. Z. Shvarts, V. M. Andreev, and A. Luque, IEEE J. Photovolt. 5, 1229 (2015).

    Article  Google Scholar 

  7. M. A. Mintairov, V. V. Evstropov, N. A. Kalyuzhnyy, S. A. Mintairov, V. D. Rumyantsev, N. K. Timoshina, M. Z. Shvarts, and V. M. Lantratov, in Proceedings of the 24th European Photovoltaics Solar Energy Conference and Exhibition, Frankfurt, Germany, Sept. 24–28, 2012, p. 459.

  8. J. Nelson, I. Ballard, K. Barnham, J. P. Connolly, J. S. Roberts, and M. Pate, J. Appl. Phys. 86, 5898 (1999).

    Article  ADS  Google Scholar 

  9. M. A. Mintairov, V. V. Evstropov, M. Z. Shvarts, S. A. Mintairov, R. A. Salii, and N. A. Kalyuzhnyy, AIP Conf. Proc. 1748, 050003 (2016).

    Article  Google Scholar 

  10. C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957).

Download references

ACKNOWLEDGMENTS

The study was supported by the Russian Science Foundation, project no. 17-72-20146.We thank N.Kh. Timoshina for measuring the dependences of the open-circuit voltage on the solar-radiation multiplicity.

Author information

Authors and Affiliations

  1. Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. A. Mintairov & R. A. Salii

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, M. Z. Shvarts & N. A. Kalyuzhnyy

Authors
  1. M. A. Mintairov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Evstropov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. A. Mintairov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. R. A. Salii
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Z. Shvarts
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. N. A. Kalyuzhnyy
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. A. Mintairov.

Additional information

Translated by V. Bukhanov

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Mintairov, M.A., Evstropov, V.V., Mintairov, S.A. et al. Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities. Semiconductors 52, 1244–1248 (2018). https://doi.org/10.1134/S1063782618100135

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782618100135

Keywords

Search

Navigation