Abstract
The main aim of this study is to research the features of luminescence properties of natural silicon oxide layers formed on the polished silicon surface, structural silicon surface, and porous silicon films. Luminescence was excited by high-energy electron beams—the local cathodoluminescence method. Cathodoluminescence of the samples was studied 3, 24, and 48 days after preparation.
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Sokolov, R.V., Zamoryanskaya, M.V., Kolesnikova, E.V. et al. Evolution of luminescence properties of natural oxide on silicon and porous silicon. Semiconductors 41, 482–486 (2007). https://doi.org/10.1134/S1063782607040240
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DOI: https://doi.org/10.1134/S1063782607040240