Abstract
Comparative studies of the specific features of the composition and photoluminescence properties of porous silicon with different morphologies are carried out by infrared and photoluminescence spectroscopy. On the basis of the experimental data and commonly accepted theoretical models, the main factors that influence the photoluminescence intensity and its deterioration upon the exposure of porous silicon to directed radiation in the visible region are established. By the example of porous silicon with 50–100 nm pores, the possibility of improving the above characteristics by chemical treatment in polyacrylic acid is shown.
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Original Russian Text © A.S. Lenshin, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 3, pp. 342–348.
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Lenshin, A.S. Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface. Semiconductors 52, 324–330 (2018). https://doi.org/10.1134/S1063782618030156
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DOI: https://doi.org/10.1134/S1063782618030156