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Photoluminescence study on defects in multicrystalline silicon

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
  • Published:
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Abstract

We report on spatially resolved luminescence measurements on ribbon-grown silicon samples. It is found that the band-edge luminescence shows anomalous temperature behavior, namely an increase in the radiation intensity with temperature. Phosphorous diffusion gettering is found to enhance this effect. The anomalous temperature behavior is attributed to nonradiative recombination governed by shallow traps. A shift in the phonon replica of the band edge luminescence peak has been observed and associated with tensile stress.

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Authors and Affiliations

  1. IHP, Im Technologiepark 25, D-15236, Frankfurt (Oder), Germany

    T. Arguirov, W. Seifer & M. Kittler

  2. BTU Cottbus, Konrad Wachsmann Allee 1, D-03046, Cottbus, Germany

    G. Jia

  3. IHP/BTU Joint Lab, Konrad Wachsmann Allee 1, D-03046, Cottbus, Germany

    T. Arguirov, W. Seifer, G. Jia & M. Kittler

Authors
  1. T. Arguirov
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  2. W. Seifer
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  3. G. Jia
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  4. M. Kittler
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The text was submitted by the authors in English.

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Arguirov, T., Seifer, W., Jia, G. et al. Photoluminescence study on defects in multicrystalline silicon. Semiconductors 41, 436–439 (2007). https://doi.org/10.1134/S1063782607040148

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  • DOI: https://doi.org/10.1134/S1063782607040148

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