Abstract
EBIC investigations of HgCdTe-based photoconductive elements have been carried out. Simulation of the two-dimensional distribution of the EBIC signal is carried out by numerical solution of the drift-diffusion ambipolar equation. It is shown that fitting the measured EBIC profiles by simulated ones allows us to obtain the effective diffusion length in the element and the surface recombination velocity on its lateral sides. The regions with enhanced recombination rate are reveled in the elements degraded by prolonged annealing at 60°C. The lateral resolution in the EBIC measurements on photoconductive elements is estimated.
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Krapukhin, V.V., Vergeles, P.S. & Yakimov, E.B. Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe. Semiconductors 41, 407–410 (2007). https://doi.org/10.1134/S1063782607040082
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DOI: https://doi.org/10.1134/S1063782607040082