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EBIC characterization of strained Si/SiGe heterostructures

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
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Abstract

Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800°C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E b. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    E. B. Yakimov

  2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, 27695, USA

    R. H. Zhang & G. A. Rozgonyi

  3. MEMC Electronic Materials, MO, 63376, St. Peters, USA

    M. Seacrist

Authors
  1. E. B. Yakimov
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  2. R. H. Zhang
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  3. G. A. Rozgonyi
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  4. M. Seacrist
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The text was submitted by the authors in English.

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Yakimov, E.B., Zhang, R.H., Rozgonyi, G.A. et al. EBIC characterization of strained Si/SiGe heterostructures. Semiconductors 41, 402–406 (2007). https://doi.org/10.1134/S1063782607040070

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  • DOI: https://doi.org/10.1134/S1063782607040070

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