Abstract
X-ray diffraction, photoluminescence, micro-cathodoluminescence, and scanning and transmission electron spectroscopy were used to study the 710 MeV Bi ion irradiation effect in the fluence range of 1.4 × 109−5 × 1010 cm−2 on the structural and optical characteristics of pure high-resistivity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. It was established that the distribution of structural damage along the ion trajectory follows the computed profile of radiation defects formed in elastic collisions. The high-density ionization effect on the material characteristics has not been found under the irradiation conditions used. Optical methods revealed a wide spectrum of radiation-induced defects, with some of them contributing to the recombination process. The damaged 4H-SiC crystal lattice party recovers after annealing at 500°C.
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Kalinina, E.V., Skuratov, V.A., Sitnikova, A.A. et al. Structural peculiarities of 4H-SiC irradiated by Bi ions. Semiconductors 41, 376–380 (2007). https://doi.org/10.1134/S1063782607040021
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DOI: https://doi.org/10.1134/S1063782607040021