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Photoluminescent properties of nc-Si/SiOx nanosystems

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Abstract

In this work the nc-Si/SiOx nanosystems were obtained on the silicon substrate by means of evaporation of silicon powder in an oxidizing atmosphere. Then deposited SiOx films were irradiated from 226Ra isotope and were annealed at 1000 °C to grow nc-Si. By means of the ellipsometric technique we studied the effect of annealing duration and irradiation on the optical characteristics of nc-Si/SiOx films. It was found that irradiation of obtained films promotes visible photoluminescence witdh maximum near 740 nm. More effective photon emission is caused by the change of nc-Si passivation conditions. Obtained experimental and theoretical results show the important influence of the Si/SiOx interface on the light emitting properties of nc-Si.

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Authors and Affiliations

  1. Electronics and Computer Technologies Department, Ivan Franko National University of Lviv, 50 Dragomanov Street, Lviv, 79005, Ukraine

    Igor B. Olenych, Liubomyr S. Monastyrskii, Yaroslav V. Boyko & Andriy P. Luchechko

  2. Lviv University of Trade and Economics, 9 Samtshuka Street, Lviv, 79011, Ukraine

    Andriy M. Kostruba

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  1. Igor B. Olenych
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  2. Liubomyr S. Monastyrskii
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  3. Yaroslav V. Boyko
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  4. Andriy P. Luchechko
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  5. Andriy M. Kostruba
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Correspondence to Igor B. Olenych.

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Olenych, I.B., Monastyrskii, L.S., Boyko, Y.V. et al. Photoluminescent properties of nc-Si/SiOx nanosystems. Appl Nanosci 9, 781–786 (2019). https://doi.org/10.1007/s13204-018-0701-4

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  • DOI: https://doi.org/10.1007/s13204-018-0701-4

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