Abstract
The specific features of detecting the contribution of the characteristic intrinsic defect in semi-insulating GaAs to photocurrent relaxation are considered. A detailed analysis of the relaxation kinetics based on approximation by the sum of exponential components is presented. The approximation results are compared with the data of photo-induced current transient spectroscopy.
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Original Russian Text © A.P. Odrinsky, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 3, pp. 294–298.
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Odrinsky, A.P. Analysis of the photocurrent relaxation in semi-insulating GaAs in the temperature range of 150–200 K. Semiconductors 49, 285–289 (2015). https://doi.org/10.1134/S1063782615030161
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DOI: https://doi.org/10.1134/S1063782615030161