Abstract
Sharp changes in the integral intensity and linewidth of the ESR spectrum that accompany the localization of the charge carriers have been revealed in α’-(BEDT-TTF)2IBr2 crystals. It has been found that the types of localization in two compounds under investigation are different: charge carriers in β″-(BEDT-TTF)4NH4[Cr(C2O4)3] are localized on irregular defects of the crystal lattice, whereas charge carriers in α’-(BEDT-TTF)2IBr2 are localized at the regular positions of the unit cell. The exchange narrowing of the ESR line and a sharp decrease in the dc and ac magnetic susceptibilities are observed in α’-(BEDT-TTF)2IBr2 at low temperatures T < 50 K. The dc and ac magnetic susceptibilities observed in α’-(BEDT-TTF)2IBr2 at high temperatures T > 50 K differ from each other, because the thermally activated hopping frequency of the charge carriers is higher than the frequency of the measuring UHF field of an ESR spectrometer.
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Original Russian Text © R.B. Morgunov, A.I. Dmitriev, A.S. Chernen’kaya, K. Yakushi, K. Yamamoto, Y. Tanimoto, 2010, published in Zhurnal Éksperimental’noı i Teoreticheskoı Fiziki, 2010, Vol. 138, No. 5, pp. 970–978.
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Morgunov, R.B., Dmitriev, A.I., Chernen’kaya, A.S. et al. Spin dynamics of charge carriers in the process of their localization in α’-(BEDT-TTF)2IBr2 single crystals. J. Exp. Theor. Phys. 111, 857–864 (2010). https://doi.org/10.1134/S1063776110110166
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DOI: https://doi.org/10.1134/S1063776110110166