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Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

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Abstract

A distribution of Al and In impurities in Ge1 − x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.

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Authors and Affiliations

  1. Institute of Physics, Academy of Sciences of Azerbaijan, G. Javid av., Baku, Az-1143, Azerbaijan

    V. K. Kyazimova, A. I. Alekperov, Z. M. Zakhrabekova & G. Kh. Azhdarov

Authors
  1. V. K. Kyazimova
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  2. A. I. Alekperov
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  3. Z. M. Zakhrabekova
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  4. G. Kh. Azhdarov
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Corresponding author

Correspondence to Z. M. Zakhrabekova.

Additional information

Original Russian Text © V.K. Kyazimova, A.I. Alekperov, Z.M. Zakhrabekova, G.Kh. Azhdarov, 2014, published in Kristallografiya, 2014, Vol. 59, No. 3, pp. 460–462.

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Kyazimova, V.K., Alekperov, A.I., Zakhrabekova, Z.M. et al. Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod. Crystallogr. Rep. 59, 415–417 (2014). https://doi.org/10.1134/S1063774514020114

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  • DOI: https://doi.org/10.1134/S1063774514020114

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