Abstract
Mathematical modeling of the distribution of Ga and Sb impurities in homogeneous (with respect to the content of the main components) single crystals of Ge–Si alloys, grown by double feeding of the melt, has been performed in the Pfann approximation. It is shown that the axial gradient of impurity concentration in Ge–Si crystals can be controlled in wide limits by changing the ratio of crystallization rate and the rates of feeding of the melt by silicon and germanium rods. The conditions for growing alloy single crystals, homogeneous both with respect to the content of the main components and to the impurity concentration distribution, have been determined.
Similar content being viewed by others
References
C. Marin and A. G. Ostrogorsky, J. Cryst. Growth 211, 378 (2000).
I. Yonenaga, J. Cryst. Growth 275, 91 (2005).
I. Yonenaga, J. Cryst. Growth 198-199, 404 (1999).
N. V. Abrosimov, S. N. Rossolenko, and W. Thieme, et al., J. Cryst. Growth 174, 182 (1997).
G. Kh. Azhdarov, T. Kucukomeroglu, A. Varilci, et al., J. Cryst. Growth 226, 437 (2001).
P. G. Azhdarov and N. A. Agaev, Neorg. Mater. 35, 763 (1999).
A. Varilci, T. Kucukomeroglu, and G. Kh. Azhdarov, Chin. J. Phys. (Taipei, Taiwan) 41, 79 (2003).
G. Kh. Azhdarov, Z. M. Zeinalov, Z. A. Agamaliyev, and A. I. Kyazimova, Crystallogr. Rep. 55, 716 (2010).
S. Adachi, J. Cryst. Growth 280, 372 (2005).
T. A. Campbell, M. Schweizer, P. Dold, et al., J. Cryst. Growth 226, 231 (2001).
K. Nakajima, T. Kusunoki, Y. Azuma, et al., J. Cryst. Growth 240, 373 (2002).
M. Yildiz, S. Dost, and B. Lent, J. Cryst. Growth 280, 151 (2005).
G. Kh. Azhdarov and Z. A. Agamaliyev, Materials of 2011 World Congress on Engineering and Technology, Shanghai, China, Oct. 28-Nov. 2, p. 2.
G. Kh. Azhdarov, Z. A. Agamaliev, and E. M. Islamzade, Crystallogr. Rep. 59, 442 (2014).
P. Dold, A. Barz, S. Recha, et al., J. Cryst. Growth 192 (1-2), 125 (1998).
A. Barz, P. Dold, Yu. Kerat, et al., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 16, 1627 (1998).
I. Yonenaga and T. Ayuzava, J. Cryst. Growth 297, 14 (2006).
S. Bok-Cheol, K. Kwang, and L. Hong-Woo, J. Cryst. Growth 290, 665 (2006).
G. Kh. Azhdarov, Z. M. Zeinalov, and L. A. Guseinli, Crystallogr. Rep. 54 (1), 152 (2009).
Z. M. Zakhrabekova, Z. M. Zeinalov, V. K. Kyazimova, and G. Kh. Azhdarov, Crystallogr. Rep. 43 (1), 1 (2007).
V. K. Kyazimova, Z. M. Zeynalov, Z. M. Zakhrabekova, and G. Kh. Azhdarov, Crystallogr. Rep. 51 (Suppl. 1), 192 (2006).
V. M. Glazov and V. S. Zemskov, Physicochemical Principles of Semiconductor Doping (Nauka, Moscow, 1967) [in Russian].
J. Schilz and V. N. Romanenko, J. Mater. Sci.: Mater. Electron. 6, 265 (1995).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Aghamaliyev, Z.A., Islamzade, E.M. & Azhdarov, G.K. Modeling the distribution of Ga and Sb impurities in Ge‒Si single crystals grown by double feeding of the melt: Growth conditions for homogeneous single crystals. Crystallogr. Rep. 61, 327–330 (2016). https://doi.org/10.1134/S1063774516020024
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063774516020024