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Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions

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Abstract

The concept and theoretical basis of the three-component zone melting method is given for growing single crystals of semiconductor solid solutions using seeds from constituent components. In the Pfann approximation, the problem of the axial concentration distribution of components in Ge–Si single crystals grown at different values of the operating parameters such as the length of the melted zone and the composition of the initial macrohomogeneous rods of solid solutions is solved. Analysis of the obtained results determines the potentialities of the method and the optimal conditions for growing single crystals with given homogeneous and graded compositions in the entire continuous series of Ge–Si solid solutions. It is shown that the three-component zone-melting method is promising for the growth of single crystals of semiconductor solid solutions.

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Authors and Affiliations

  1. Baku State University, Az-1148, Baku, Azerbaijan

    Z. A. Aghamaliyev

  2. Institute of Physics, National Academy of Sciences of Azerbaijan, Az-1143, Baku, Azerbaijan

    Z. A. Aghamaliyev

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  1. Z. A. Aghamaliyev
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Correspondence to Z. A. Aghamaliyev.

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Translated by V. Bukhanov

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Aghamaliyev, Z.A. Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions. Semiconductors 55, 283–288 (2021). https://doi.org/10.1134/S1063782621020032

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  • DOI: https://doi.org/10.1134/S1063782621020032

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