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Hybrid technique for growing homogeneous single crystals of semiconductor solid solutions from melt

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Abstract

A concept and fundamentals of a hybrid technique for growing homogeneous single crystals of semiconductor solid solutions (SSs) from melt are presented. The growth consists of two stages. In the first stage, a single crystal with a specified concentration of the more refractory component is grown by an innovative method of directional constitutional supercooling of a melt in the steady-state mode. In the second stage, the melt is fed with the second component. Using an example of the classical Ge-Si system, the concentration profiles of the components along the crystal axis are calculated and the SS growth dynamics ensuring single crystallinity over the entire ingot length is determined. An analysis of the results yields the optimal technological parameters and conditions for growing homogeneous single crystals of SSs of a specified composition and size.

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References

  1. V. N. Romanenko, Control of Semiconductor Crystal Composition (Metallurgiya, Moscow, 1976) [in Russian], p. c.

    Google Scholar 

  2. J. Schilz and V. N. Romanenko, J. Mater. Sci.: Mater. Electron. 6, 265 (1995).

    Google Scholar 

  3. V. M. Glazov and V. S. Zemskov, Physicochemical Principles of Semiconductor Doping (Nauka, Moscow, 1967) [in Russian].

    Google Scholar 

  4. I. Yonenaga, J. Cryst. Growth 275, 91 (2005).

    Article  ADS  Google Scholar 

  5. N. V. Abrosimov, S. N. Rossolenko, W. Thieme, et. al., J. Cryst. Growth 174, 182 (1997).

    Article  ADS  Google Scholar 

  6. I. Yonenaga, J. Cryst. Growth 198/199, 404 (1999).

    Article  ADS  Google Scholar 

  7. C. Marin and A. G. Ostrogorsky, J. Cryst. Growth 211, 378 (2000).

    Article  ADS  Google Scholar 

  8. G. Kh. Azhdarov, T. Kucukomeroglu, A. Varilci, et al., J. Cryst. Growth 226, 437 (2001).

    Article  ADS  Google Scholar 

  9. P. G. Azhdarov and N. A. Agaev, Neorg. Mater. 35(8), 763 (1999).

    Google Scholar 

  10. A. Varilci, T. Kucukomeroglu, and G. Kh. Azhdarov, Chin. J. Phys. (Taipei, Taiwan) 41, 79 (2003).

    Google Scholar 

  11. G. Kh. Azhdarov, Z. M. Zeinalov, Z. A. Agamaliev, et al., Crystallogr. Rep. 55(4), 716 (2010).

    Article  ADS  Google Scholar 

  12. S. Adachi, J. Cryst. Growth 280, 372 (2005).

    Article  ADS  Google Scholar 

  13. T. A. Campbell, M. Schweizer, P. Dold, et al., J. Cryst. Growth 226, 231 (2001).

    Article  ADS  Google Scholar 

  14. P. Dold, A. Barz, S. Recha, et al., J. Cryst. Growth 192(1–2), 125 (1998).

    Article  ADS  Google Scholar 

  15. G. Kh. Azhdarov, Z. M. Zeinalov, and L. A. Guseinli, Crystallogr. Rep. 54(1), 152 (2009).

    Article  ADS  Google Scholar 

  16. G. Kh. Azhdarov, Z. M. Zeinalov, Z. A. Agamaliev, et al., Crystallogr. Rep. 55(4), 716 (2010).

    Article  ADS  Google Scholar 

  17. K. Nakajima, T. Kusunoki, Y. Azuma, et al., J. Cryst. Growth 240, 373 (2002).

    Article  ADS  Google Scholar 

  18. K. Nakajima, J. Cryst. Growth 205, 270 (1999).

    Article  ADS  Google Scholar 

  19. M. Yildiz, S. Dost, and B. Lent, J. Cryst. Growth 280, 151 (2005).

    Article  ADS  Google Scholar 

  20. Z. M. Zakhrabekova, Z. M. Zeinalov, V. K. Kyazimova, and G. Kh. Azhdarov, Neorg. Mater. 43(1), 5 (2007).

    Article  Google Scholar 

  21. H. Miyata, J. Cryst. Growth 303, 607 (2007).

    Article  ADS  Google Scholar 

  22. G. Kh. Azhdarov, Z. M. Zeinalov, Z. A. Agamaliev, et al., Crystallogr. Rep. 56(3), 531 (2011).

    Article  ADS  Google Scholar 

  23. G. Kh. Azhdarov and Z. A. Aghamaliyev, Materials of 2011 World Congress on Engineering and Technology, Shanghai, China, Oct. 28–Nov. 2, p. 236.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, AZ1143, Azerbaijan

    G. Kh. Azhdarov, Z. A. Agamaliev & E. M. Islamzade

Authors
  1. G. Kh. Azhdarov
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  2. Z. A. Agamaliev
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  3. E. M. Islamzade
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Corresponding author

Correspondence to Z. A. Agamaliev.

Additional information

Original Russian Text © G.Kh. Azhdarov, Z.A. Agamaliev, E.M. Islamzade, 2014, published in Kristallografiya, 2014, Vol. 59, No. 3, pp. 489–493.

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Azhdarov, G.K., Agamaliev, Z.A. & Islamzade, E.M. Hybrid technique for growing homogeneous single crystals of semiconductor solid solutions from melt. Crystallogr. Rep. 59, 442–445 (2014). https://doi.org/10.1134/S1063774514020059

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  • DOI: https://doi.org/10.1134/S1063774514020059

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