Abstract
The mechanisms of physical processes at the metal/La1–xSrxMnO3 manganite interfaces that determine the memristive properties of structures based on them were investigated experimentally and by numerical modeling. The transport properties of percolation channels of memristive structures based on epitaxial La1–xSrxMnO3–δ films were studied. It is shown that resistive switching in the studied structures is controlled by two processes. These are a change in the resistive state of the normal metal–oxide interface under the action of alternating voltage and electro diffusion of oxygen to vacancies, while the level of doping (oxygen) of the conducting channel changes, the electric field potential is redistributed, as a result, the resistive properties of the heterocontact change. The calculations showed that each successive transition of the heterostructure from the OFF to the ON state significantly depends not only on the switching voltage but also on the size and location of the gap structure that has been preserved from the previous switching from ON to OFF.
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Funding
The work was supported by the state tasks of the Osipyan Institute of Solid State Physics, RAS and the Institute of Problems of Microelectronics and High-Purity Materials RAS, as well as by the Russian Foundation for Basic Research, grant nos. 19-29-03021 mk and 19-29-03011 mk.
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Tulina, N.A., Shmytko, I.M., Ivanov, A.A. et al. Memristive Properties of Manganite-Based Planar Structures. Russ Microelectron 51, 349–357 (2022). https://doi.org/10.1134/S1063739722050110
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DOI: https://doi.org/10.1134/S1063739722050110