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Resistive Switching of Memristors Based on (Co40Fe40B20)x(LiNbO3)100 – x Nanocomposite with a LiNbO3 Interlayer: Plasticity and Time Characteristics

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Abstract

The resistive switching (RS) of metal/nanocomposite/metal (M/NC/M) memristive structures based on the (Co40Fe40B20)x(LiNbO3)100 – x nanocomposite with a ferromagnetic alloy content х ≈ 8–20 at % is studied. The structures were synthesized by ion beam sputtering with an increased oxygen content (≈2 × 10–5 Torr) at the initial stage of NC growth, as a result of which a thin (15–18 nm) LiNbO3 layer appears at the bottom electrode. It is found that the structures have multilevel character of RS (at least four levels) with the retention time of the emerging resistive states of more than 104 s and demonstrate the possibility of the resistive states change according to biosimilar rules such as spike-timing-dependent plasticity (STDP). Unusual kinetics of RS to the low-resistance state was found: RS occurs with a delay of about 70 μs; the RS time in this case reaches ~5 ns, and the energy consumption for switching is ~1 nJ.

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Funding

This study was carried out using equipment of the resource centers of the National Research Center Kurchatov Institute and was supported by the Russian Science Foundation, project no. 16-19-10233 in the synthesis of memristors and the study of their structural and temporal characteristics; it was also supported by the Russian Foundation for Basic Research, project nos. 18-37-00267, 18‑07-00729, and 19-07-00738 and a state contract in the study of the electrophysical properties of structures.

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Authors and Affiliations

  1. National Research Center Kurchatov Institute, 123182, Moscow, Russia

    A. N. Matsukatova, K. E. Nikiruy, A. A. Minnekhanov, S. N. Nikolaev, A. V. Emelyanov, V. A. Levanov, K. Yu. Chernoglazov, A. V. Sitnikov & V. V. Rylkov

  2. Moscow State University, 119991, Moscow, Russia

    A. N. Matsukatova & V. A. Levanov

  3. Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Moscow oblast, Russia

    A. V. Emelyanov & A. S. Bugaev

  4. Voronezh State Technical University, 394026, Voronezh, Russia

    A. V. Sitnikov

  5. Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, 141190, Fryazino, Moscow oblast, Russia

    A. S. Vedeneev, A. S. Bugaev & V. V. Rylkov

Authors
  1. A. N. Matsukatova
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  2. K. E. Nikiruy
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  3. A. A. Minnekhanov
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  4. S. N. Nikolaev
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  5. A. V. Emelyanov
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  6. V. A. Levanov
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  7. K. Yu. Chernoglazov
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  8. A. V. Sitnikov
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  9. A. S. Vedeneev
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  10. A. S. Bugaev
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  11. V. V. Rylkov
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Corresponding author

Correspondence to V. V. Rylkov.

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Translated by E. Chernokozhin

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Matsukatova, A.N., Nikiruy, K.E., Minnekhanov, A.A. et al. Resistive Switching of Memristors Based on (Co40Fe40B20)x(LiNbO3)100 – x Nanocomposite with a LiNbO3 Interlayer: Plasticity and Time Characteristics. J. Commun. Technol. Electron. 65, 1198–1203 (2020). https://doi.org/10.1134/S1064226920090077

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  • DOI: https://doi.org/10.1134/S1064226920090077

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