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Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration

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Abstract

The origin of the roughness of Fin FET channel sidewalls in the heterointegration scheme was discussed. It is shown that its presence is caused by the original roughness of the Si sidewalls of the “fin” structures formed during plasma etching. A number of processing steps affecting the morphology of the Si fin structures were analyzed. The smoothing of the resistive polymeric mask in the HBr-containing plasma, distributed trimming in the layered mask, and control of the temperature conditions are among these technologies.

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References

  1. Krasnikov, G.Ya., Konstruktivno-tekhnologicheskie osobennosti submikronnykh MOP-tranzistorov (Constructive and Technological Features of Submicron MOSFETs), Moscow: Tekhnosfera, 2011.

    Google Scholar 

  2. Micro- and Nanoelectronics: Emerging Device Challenges and Solutions, Brozek, T., Ed., Boca Raton, FL: CRC, 2014.

  3. Moroz, V., Transition from planar MOSFETs to FinFETs and its impact on design and variability, Proceedings of the Berkley Seminar, October 28, 2011.

    Google Scholar 

  4. Leung, G., et al., Device-and circuit-level variability caused by line edge roughness for sub-32-nm Fin FET technologies, IEEE Trans. Electron Dev., 2012, vol. 59, no. 8, pp. 2057–2063.

    Article  Google Scholar 

  5. Fiorenza, J.G. et al., Aspect ratio trapping: a unique technology for integrating Ge and III-Vs with silicon CMOS, ECS Trans., 2010, vol. 33, no. 6, pp. 963–976.

    Article  Google Scholar 

  6. Kim, M.S. et al., Self-aligned double patterning of 1× nm FinFETs; a new device integration through the challenging geometry, Proceedings of the 14th IEEE International Conference on Ultimate Integration on Silicon (ULIS), 2013, pp. 101–104.

    Google Scholar 

  7. Milenin, A. et al., Patterning aspects of SiGe/Ge BFFT Fabrication, ECS Trans., 2013, vol. 50, no. 46, pp. 3–9.

    Article  Google Scholar 

  8. Vereecke, G. et al., Characterization of modification of 193-nm photoresist by HBr plasma,” Electrochem. Solid State Lett., 2011, vol. 14, no. 10, pp. H408–H410.

    Article  Google Scholar 

  9. Kofuji, N. et al., Line-edge roughness increase due to wiggling enhanced by initial pattern waviness, Jpn. J. Appl. Phys., 2014, vol. 53, no. 3S2, p. 03DE01.

    Article  Google Scholar 

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Authors and Affiliations

  1. Molecular Electronics Research Institute SC, Zelenograd, Russia

    G. V. Baranov

  2. Moscow Institute of Physics and Technology (State University), Dolgoprudny, Russia

    G. V. Baranov

  3. IMEC, Leuven, Belgium

    A. P. Milenin & M. P. Baklanov

Authors
  1. G. V. Baranov
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  2. A. P. Milenin
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  3. M. P. Baklanov
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Corresponding author

Correspondence to G. V. Baranov.

Additional information

Original Russian Text © G.V. Baranov, A.P. Milenin, M.P. Baklanov, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 3, pp. 197–202.

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Baranov, G.V., Milenin, A.P. & Baklanov, M.P. Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration. Russ Microelectron 45, 186–190 (2016). https://doi.org/10.1134/S1063739716030033

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  • DOI: https://doi.org/10.1134/S1063739716030033

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