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Plasma Etch Equipment

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Handbook of Integrated Circuit Industry

Abstract

This chapter begins with a brief overview of the plasma etching principle, equipment categorization, and their applications. A total of 11 typical plasma etch techniques and equipment are introduced, including ion beam etching (IBE), plasma etching (PE), reactive ion etching (RIE), magnetically enhanced RIE (MERIE), capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron cyclotron resonance (ECR), remote plasma source (RPS), helicon wave plasma (HWP), surface wave plasma (SWP), and atomic layer etching (ALE). In addition, three major components common to all kinds of plasma etch tool, cluster platform, reactor material, and electrostatic chuck (ESC) are described. Dry clean equipment is also included in this chapter.

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Author information

Authors and Affiliations

  1. Advanced Micro-Fabrication Equipment Inc. (AMEC), Shanghai, China

    Yuan Pu

Authors
  1. Yuan Pu
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Corresponding author

Correspondence to Yuan Pu .

Editor information

Editors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, China

    Yangyuan Wang

  2. GTA Semiconductor Co., Ltd., Shanghai, China

    Min-Hwa Chi

  3. School of Software and Microelectronics, Peking University, Beijing, China

    Jesse Jen-Chung Lou

  4. Peng Cheng Laboratory, Shenzhen, Guangdong, China

    Chun-Zhang Chen

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© 2024 Publishing House of Electronics Industry

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Pu, Y. (2024). Plasma Etch Equipment. In: Wang, Y., Chi, MH., Lou, J.JC., Chen, CZ. (eds) Handbook of Integrated Circuit Industry. Springer, Singapore. https://doi.org/10.1007/978-981-99-2836-1_68

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