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Complementary-transistor wideband path for the compensation of analog ICs designed to operate under pulsed ionizing irradiation

  • Radiation-Effect Modeling and Simulation in Silicon Microelectronics
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Abstract

For analog ICs exposed to pulsed ionizing radiation, a parallel wideband path is proposed as a means of compensation to reduce the recovery time, increase the bandwidth, and prevent parasitic oscillations and latchups.

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Authors and Affiliations

  1. Specialized Electronic Systems (SPELS), Moscow, Russia

    T. M. Agakhanyan

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  1. T. M. Agakhanyan
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Original Russian Text © T.M. Agakhanyan, 2006, published in Mikroelektronika, 2006, Vol. 35, No. 3, pp. 230–234.

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Agakhanyan, T.M. Complementary-transistor wideband path for the compensation of analog ICs designed to operate under pulsed ionizing irradiation. Russ Microelectron 35, 197–199 (2006). https://doi.org/10.1134/S1063739706030085

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  • DOI: https://doi.org/10.1134/S1063739706030085

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