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Kinetic Phenomena in a Semiconductor Excited by an Oriented Beam of Fast Particles

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Abstract

It is shown that the passage of channeled particles through a crystal without a center of symmetry or in a magnetic field leads to the appearance of a current, i.e., quasi-photogalvanic and quasi-photomagnetic effects. The theory of these phenomena is developed. The orientation dependence of the quasi-photomagnetic and quasi-photogalvanic currents on the entry angle of a channeled particle with respect to the crystallographic planes is predicted. The dependence of the effect on the state and quantum transitions of a channeled particle is studied. The contribution of matrix elements of the first and second kinds to the quasi-photogalvanic effect is investigated. The intensity of the quasi-photogalvanic current induced by the nondipole radiation of hard photons generated by a high-energy channeled particle is estimated.

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Funding

The work was supported within the Project of an increase in the competitive ability of the National Research Nuclear University MEPhI (contract no. 02.a03.21.0005, 27.08.2013) using equipment of the Center for Collective Use “Complex for the simulation and processing of data of mega-class research facilities of the Research Center “Kurchatov Institute” (grant of the Ministry of Education and Science, work identifier RFMEFI62117X0016).

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  1. National Research Nuclear University MEPhI, 115409, Moscow, Russia

    E. A. Mazur

  2. Kurchatov Institute National Research Center, 123122, Moscow, Russia

    E. A. Mazur

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  1. E. A. Mazur
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Correspondence to E. A. Mazur.

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Translated by L. Kulman

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Mazur, E.A. Kinetic Phenomena in a Semiconductor Excited by an Oriented Beam of Fast Particles. J. Surf. Investig. 16, 347–358 (2022). https://doi.org/10.1134/S1027451022020136

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  • DOI: https://doi.org/10.1134/S1027451022020136

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