Abstract
Nanophases and films of SiO2 and metal silicides are obtained by the low-energy (E0 = 1–5 keV) implantation of \({\text{O}}_{{\text{2}}}^{{\text{ + }}},\) Ba+, Cu+ and Co+ ions followed by annealing on the surface of a free Si/Cu (100) nanofilm system. Their surface morphology, composition, energy-band parameters, the maximum value of the secondary-electron-emission coefficient, and the quantum yield of photoelectrons are determined. It is shown that the band gap of metal silicides is 0.3–0.4 eV, and their specific resistance is 100–500 µOhm cm.
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Isakhanov, Z.A., Yorkulov, R.M., Umirzakov, B.E. et al. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System. J. Surf. Investig. 15, 401–403 (2021). https://doi.org/10.1134/S1027451021020221
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DOI: https://doi.org/10.1134/S1027451021020221