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Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by \({\text{O}}_{2}^{ + }\) Ion Implantation

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Abstract

The composition and parameters of energy bands in thin SiO2 films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO2 films grown on thick films, the value of Eg for thin SiO2 films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO2 film, which arise because of the impossibility of heating the system above 700 K.

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Authors and Affiliations

  1. Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, Uzbekistan

    B. E. Umirzakov, M. K. Ruzibaeva, Z. A. Isakhanov & R. M. Erkulov

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  1. B. E. Umirzakov
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  2. M. K. Ruzibaeva
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  3. Z. A. Isakhanov
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  4. R. M. Erkulov
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Correspondence to Z. A. Isakhanov.

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Translated by V. Isaakyan

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Umirzakov, B.E., Ruzibaeva, M.K., Isakhanov, Z.A. et al. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by \({\text{O}}_{2}^{ + }\) Ion Implantation. Tech. Phys. 64, 881–883 (2019). https://doi.org/10.1134/S1063784219060239

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  • DOI: https://doi.org/10.1134/S1063784219060239

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