Abstract
Two catalytic transformations of CO (oxidation and hydrogenation) on the semiconductors of the InSb-CdTe system were studied using identical conditions, procedures, and research methods. The most active reagents (CO and H2) in reaction mixtures of CO with O2 and of CO with H2 showed similar behavior and, accordingly, the reactions followed the same (shock) mechanism. The reactivity of the reagent molecules was found to depend not only on the local factor (the chemical properties of the molecules and active center), but also on the collective (electronic) factor determined by the position of the Fermi level and the character of the energy spectrum of the surface. The difference lies in the maximum CO conversion during the oxidation and hydrogenation (83 and 91% at T = 380 K) and in the activity leader ((InSb)0.05(CdTe)0.95 solid solution during oxidation; CdTe during hydrogenation). Due to their reasonably high catalytic activity even at room temperature, the InSb-CdTe semiconductors of the indicated composition can be recommended for CO detoxication at considerably lowered energy consumption.
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Original Russian Text © I.A. Kirovskaya, E.V. Mironova, 2015, published in Zhurnal Fizicheskoi Khimii, 2015, Vol. 89, No. 7, pp. 1157–1163.
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Kirovskaya, I.A., Mironova, E.V. Oxidation and hydrogenation of carbon(II) oxide on the semiconductors of the InSb-CdTe system. Russ. J. Phys. Chem. 89, 1286–1292 (2015). https://doi.org/10.1134/S003602441507016X
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DOI: https://doi.org/10.1134/S003602441507016X