Abstract
A concept of the optimal design of a silicon waveguide based on optically coupled Mie-resonant nanoantennas for efficient inputting of light from point emitters associated with excitons localized at defects in a thin InSe film is proposed. Numerical calculations demonstrate that the efficiency of coupling between a dipole emitter and a resonant silicon waveguide is four orders of magnitude greater than that for a conventional ridge waveguide.
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Acknowledgments
We are grateful to T.V. Shubina for useful comments and advice.
Funding
This study was supported by the Russian Foundation for Basic Research, project nos. 19-32-90223 (simulation of the optical coupling between the quantum emitter and the waveguide) and 18-29-20097 (numerical optimization of the transmission of the resonant waveguide). Part of the study was supported by the Quantum Technology Center, Moscow State University.
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Russian Text © The Author(s), 2020, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 112, No. 11, pp. 730–735.
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Gartman, A.D., Kroichuk, M.K., Shorokhov, A.S. et al. Efficient Integration of Single-Photon Emitters in Thin InSe Films into Resonance Silicon Waveguides. Jetp Lett. 112, 693–698 (2020). https://doi.org/10.1134/S002136402023006X
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DOI: https://doi.org/10.1134/S002136402023006X