Abstract
The effective mass m* of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n s , the effective mass has been found to grow with decreasing n s , obeying the relation m*/m b = n s /(n s − n c ), where m b is the electron band mass and n c ≈ 0.54 × 1011 cm−2. In samples with maximum mobilities ranging between 90 and 220 m2/(V s), the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.
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Melnikov, M.Y., Shashkin, A.A., Dolgopolov, V.T. et al. Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells. Jetp Lett. 100, 114–119 (2014). https://doi.org/10.1134/S0021364014140094
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DOI: https://doi.org/10.1134/S0021364014140094