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A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices

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Abstract

A description of an experimental measuring cell designed to study the electrophysical characteristics of semiconductor elements at low temperatures is given. In contrast to traditional two-contact devices of this type, the developed experimental cell has three measuring contacts, which make it possible to carry out electrophysical measurements of flat and volumetric samples. The working temperature range of the cell is 16 K or higher. The impedance characteristics of heterojunction silicon and perovskite solar cells were measured in the frequency ranges from 100 Hz to 5 MHz and temperatures of 120–300 K. The measurement results are in satisfactory agreement with the literature data.

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REFERENCES

  1. Flickett, F.R., Electrical Properties of Materials and their Measurement at low Temperatures, Washington DC: Government Printing Office, 1982.

    Google Scholar 

  2. Ekin, J., Experimental Techniques for Low-Temperature Measurements: Cryostat Design, Material Properties and Superconductor Critical-Current Testing, New York: Oxford Univ. Press, 2006. https://doi.org/10.1063/1.2743130

  3. Flynn, T.M., Cryogenic Engineering, New York: Marcel Dekker, 1997, pp. 158–180.

    Google Scholar 

  4. Parma, V., Cryostat Design, CERN, 2014. arXiv:1501.07154.

  5. Das, A., Das, P., Banerjee, S., Reza, A., and Bannerjee, K.D., Proc. 2015 COMSOL Conference, Pune, 2015. https://www.comsol.de/paper/download/295521/das _poster.pdf

  6. Moliá, J., Ibarra, A., Marüineda, J., Zamarro, J.M., and Hernández, A., Dielectric Properties Measurement System at Cryogenic Temperatures and Microwave Frequencies, Madrid: Ciemat-735, 1994. https://inis.iaea.org/collection/NCLCollectionStore/_Public/26/008/26008650.pdf

  7. Singh, M., Chaujar, R., and Rakshit, R.K., Curr. Sci., 2018, vol. 115, no. 6, p. 1085. https://doi.org/10.18520/CS/V115/I6/1085-1090

    Article  Google Scholar 

  8. Novak, P., Pechousek, J., Malina, O., Navarik, J., and Machala, L., AIP Conf. Proc., 2014, vol. 1622, no. 1, p. 67. https://doi.org/10.1063/1.4898612

    Article  ADS  Google Scholar 

  9. Thakkar, H., Joshi, S.U., Dave, B.V., and Trivedi, S.J., J. Sci. Technol. Res., 2010, vol. 1, no. 2, p. 30. https://www.researchgate.net/publication/327437887.

    Google Scholar 

  10. Singh, Y., Int. J. Mod. Phys.: Conf. Ser., 2013, vol. 22, p. 741. https://doi.org/10.1142/S2010194513010969

    Article  Google Scholar 

  11. Zhang, Y., Li, L., Yuan, S., Li, G., and Zhang, W., Electrochim. Acta, 2013, vol. 109, p. 221. https://doi.org/10.1016/j.electacta.2013.07.152

    Article  ADS  Google Scholar 

  12. Garland, J.E., Crain, D.J., and Roy, D., Sol. Energy, 2011, vol. 85, no. 11, p. 2912. https://doi.org/10.1016/j.solener.2011.08.029

    Article  ADS  Google Scholar 

  13. Wang, M., Yim, W.-L., Liao, P., and Shen, Y., ChemistrySelect, 2017, vol. 2, no. 16, p. 4469. https://doi.org/10.1002/slct.201700776

    Article  Google Scholar 

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Funding

This work was supported by the Ministry of Education and Science of the Republic of Kazakhstan, grants AR05133651, AP09260940.

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Authors and Affiliations

  1. Satbayev University, Institute of Physics and Technology, Almaty, Kazakhstan

    K. P. Aimaganbetov, S. R. Zhantuarov & N. Zh. Almasov

  2. Kazakh National University, Almaty, Kazakhstan

    A. U. Aldiyarov

  3. Nazarbayev University, Nur-Sultan, Kazakhstan

    N. Zh. Almasov

  4. Scientific and Technical Center for Thin-Film Technologies in Power Engineering, Ioffe Physical–Technical Institute, 194021, St. Petersburg, Russia

    E. I. Terukov

  5. Universität Potsdam, Potsdam, Germany

    N. S. Tokmoldin

Authors
  1. K. P. Aimaganbetov
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  2. A. U. Aldiyarov
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  3. S. R. Zhantuarov
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  4. N. Zh. Almasov
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  5. E. I. Terukov
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  6. N. S. Tokmoldin
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Corresponding authors

Correspondence to K. P. Aimaganbetov or N. S. Tokmoldin.

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Aimaganbetov, K.P., Aldiyarov, A.U., Zhantuarov, S.R. et al. A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices. Instrum Exp Tech 64, 886–890 (2021). https://doi.org/10.1134/S0020441221050146

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  • DOI: https://doi.org/10.1134/S0020441221050146

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