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A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes

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Abstract

It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active region. Based on this regularity, a method was developed that provides simple determination of the ambipolar-diffusion length and the carrier lifetime.

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Authors and Affiliations

  1. Tomsk National Research University, pr. Lenina 36, Tomsk, 634050, Russia

    G. I. Ayzenshtat

  2. Research Institute of Semiconductor Devices, Krasnoarmeiskaya ul. 99a, Tomsk, 634050, Russia

    A. Yu. Yushchenko

Authors
  1. G. I. Ayzenshtat
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  2. A. Yu. Yushchenko
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Correspondence to G. I. Ayzenshtat.

Additional information

Original Russian Text © G.I. Ayzenshtat, A.Yu. Yushchenko, 2015, published in Pribory i Tekhnika Eksperimenta, 2015, No. 2, pp. 118–121.

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Ayzenshtat, G.I., Yushchenko, A.Y. A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes. Instrum Exp Tech 58, 279–282 (2015). https://doi.org/10.1134/S0020441215010236

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  • DOI: https://doi.org/10.1134/S0020441215010236

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