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An apparatus for pulse chemical vapor deposition of layers

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Abstract

An apparatus for chemical deposition of layers of different materials with pulsed automated dosing of a hot gas phase of volatile metal-organic compounds (precursors) admitted into a reaction chamber is described. The apparatus has three channels for dosing the gas precursor phase and three channels for dosing reacting gases. As an example, a technique for depositing HfO2 films on a (100)Si substrate is presented, and the deposited films are analyzed. It is shown, that this apparatus can be used to deposit layers on complex 3D systems with a large aspect ratio using an example of the deposition of HfO2 layers on the inner surfaces of channels of a microchannel plate.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090, Russia

    Yu. V. Shevtsov, B. M. Kuchumov, A. R. Semenov & I. K. Igumenov

Authors
  1. Yu. V. Shevtsov
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  2. B. M. Kuchumov
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  3. A. R. Semenov
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  4. I. K. Igumenov
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Corresponding author

Correspondence to Yu. V. Shevtsov.

Additional information

Original Russian Text © Yu.V. Shevtsov, B.M. Kuchumov, A.R. Semenov, I.K. Igumenov, 2013, published in Pribory i Tekhnika Eksperimenta, 2013, No. 3, pp. 116–120.

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Shevtsov, Y.V., Kuchumov, B.M., Semenov, A.R. et al. An apparatus for pulse chemical vapor deposition of layers. Instrum Exp Tech 56, 353–357 (2013). https://doi.org/10.1134/S002044121303010X

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  • DOI: https://doi.org/10.1134/S002044121303010X

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