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Rotation sensors on the basis of a semiconductor optical amplifier

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Abstract

The results of studies of semiconductor optical amplifiers, semiconductor ring lasers, and rotation sensors that are manufactured on their basis are presented. The lengths of the resonators of semiconductor ring lasers were varied from 3 to 800 m, and the linewidth of laser radiation changed from 30 MHz to 3 kHz. The possibility of creating a rotation sensor with a scale coefficient of 900 kHz/deg/s and a minimally detectable rotational velocity of 1 deg/s on the basis of semiconductor optical amplifiers is shown.

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Authors and Affiliations

  1. ZAO Novaya Lazernaya Tekhnika, ul. Vvedenskogo 3, Moscow, 117342, Russia

    V. V. Akparov, V. P. Duraev & S. V. Medvedev

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  1. V. V. Akparov
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  2. V. P. Duraev
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  3. S. V. Medvedev
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Correspondence to V. V. Akparov.

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Original Russian Text © V.V. Akparov, V.P. Duraev, S.V. Medvedev, 2013, published in Pribory i Tekhnika Eksperimenta, 2013, No. 1, pp. 84–88.

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Akparov, V.V., Duraev, V.P. & Medvedev, S.V. Rotation sensors on the basis of a semiconductor optical amplifier. Instrum Exp Tech 56, 200–204 (2013). https://doi.org/10.1134/S0020441213010156

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  • DOI: https://doi.org/10.1134/S0020441213010156

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