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A multichannel charge-sensitive amplifier for reading out the signals of double-sided silicon detectors of the tracking system for the CBM project

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Abstract

An eight-channel charge-sensitive amplifier chip created by the 0.18 μm CMOS process is intended for reading out the signals of double-sided silicon detectors of the tracking system for the CBM project of the new FAIR accelerator facility (GSI, Darmstadt, Germany). A dynamic range of ≥5 pC is attained for both polarities of the input signal, the power consumption of one channel does not exceed 1.3 mW, and the noise response of the amplifier is characterized as 1024ē + 24ē /pF (the rms deviation). Results of designing the microcircuit and its experimental characteristics are given.

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References

  1. The CBM Collaboration, J. Phys. G: Nucl. Part. Phys., 2008, vol. 35, no. 10, p. 049803.

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  3. Heuser, J., Proc. of XVII Intern. Workshop on Vertex Detectors VERTEX 2008, 2008, Utö, Sweden, p. 017.

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Original Russian Text © E.V. Atkin, Yu.A. Volkov, A.G. Voronin, I.I. Il’yushchenko, A.S. Silaev, A.Yu. Fedenko, 2010, published in Pribory i Tekhnika Eksperimenta, 2010, No. 4, pp. 57–60.

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Atkin, E.V., Volkov, Y.A., Voronin, A.G. et al. A multichannel charge-sensitive amplifier for reading out the signals of double-sided silicon detectors of the tracking system for the CBM project. Instrum Exp Tech 53, 520–523 (2010). https://doi.org/10.1134/S0020441210040081

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  • DOI: https://doi.org/10.1134/S0020441210040081

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