Abstract
Protective oxide coating of p-n junctions in HPGe detectors is investigated. Owing to this coating, HPGe detectors can be used, in particular, in liquid nitrogen environment without capsulation. A simple and practically feasible method for forming the protective layer by processing detectors in methanol is described. It is shown that this layer reliably protects p-n junctions of HPGe detectors from environmental impact. The characteristics of the protective oxide film are investigated using the Raman scattering method.
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Original Russian Text © Yu.B. Gurov, V.S. Karpukhin, S.V. Rozov, V.G. Sandukovsky, D. Borowicz, J. Kwiatkowska, B. Rajchel, J. Yurkowski, 2009, published in Pribory i Tekhnika Eksperimenta, 2009, No. 1, pp. 151–154.
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Gurov, Y.B., Karpukhin, V.S., Rozov, S.V. et al. Passivation of HPGe detectors. Instrum Exp Tech 52, 137–140 (2009). https://doi.org/10.1134/S0020441209010230
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DOI: https://doi.org/10.1134/S0020441209010230