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A Hydrogen Sensor Based on Pd/InP Structures

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Journal of Applied Spectroscopy Aims and scope

Тhe development of a photoelectrical hydrogen sensor without sensor element heating is presented. For the sensitive element of the hydrogen sensor the Pd/n-InP (Schottkie diode) and Pd/oxide/InP (metal–insulator–semiconductor) structures were developed and investigations of the photovoltage and the photocurrent of the structures depending on the hydrogen concentration in the range 0.1–100 vol.% in a nitrogen–hydrogen gas mixture were carried out. It is shown that the photovoltage and photocurrent decay rate and the hydrogen concentration are exponentially related to each other. The laboratory samples of sensor for hydrogen determination in the range 100–30,000 ppm which are able to operate at room temperature with response rate of 1–2 s are developed.

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Authors and Affiliations

  1. Ioffe Institute of the Russian Academy of Sciences, St. Petersburg, Russia

    V. A. Shutaev, E. A. Grebenshchikova & Yu. P. Yakovlev

  2. IBSG Co., Ltd., St. Petersburg, Russia

    V. G. Sidorov

Authors
  1. V. A. Shutaev
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  2. E. A. Grebenshchikova
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  3. V. G. Sidorov
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  4. Yu. P. Yakovlev
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Correspondence to V. A. Shutaev.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 89, No. 5, pp.714–718, September–October, 2022. https://doi.org/10.47612/051475062022895714718.

Reported at the First International Conference on Lasers, Semiconductor Emitters and Derived Systems, May 23–27, 2022, Minsk, Belarus.

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Shutaev, V.A., Grebenshchikova, E.A., Sidorov, V.G. et al. A Hydrogen Sensor Based on Pd/InP Structures. J Appl Spectrosc 89, 918–922 (2022). https://doi.org/10.1007/s10812-022-01448-9

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  • DOI: https://doi.org/10.1007/s10812-022-01448-9

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