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Growth of an InP/GaInAsP Heterostructure on a Shaped InP Substrate for Laser Diode-Based CO2 Sensing

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Inorganic Materials Aims and scope

Abstract—

This paper presents a technological study aimed at growing buried-channel heterostructures for single-mode semiconductor lasers operating in the spectral range 1600–1610 nm. We have produced laser diodes with an emission wavelength corresponding to an overtone in the absorption band of carbon dioxide and assessed the effect of temperature on their optical emission spectra. It has been shown that their emission spectra can be tuned over the range from 1559 to 1620 nm. We have demonstrated the feasibility of producing intelligent fiber-optic systems for remote carbon dioxide concentration monitoring.

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Funding

This work was supported by the Russian Federation Ministry of Science and Higher Education as part of the state research target for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, in the field of basic research.

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 119991, Moscow, Russia

    M. G. Vasil’ev, A. M. Vasil’ev, A. D. Izotov, Yu. O. Kostin & A. A. Shelyakin

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  1. M. G. Vasil’ev
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  2. A. M. Vasil’ev
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  3. A. D. Izotov
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  4. Yu. O. Kostin
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  5. A. A. Shelyakin
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Correspondence to M. G. Vasil’ev.

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Translated by O. Tsarev

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Vasil’ev, M.G., Vasil’ev, A.M., Izotov, A.D. et al. Growth of an InP/GaInAsP Heterostructure on a Shaped InP Substrate for Laser Diode-Based CO2 Sensing. Inorg Mater 58, 785–791 (2022). https://doi.org/10.1134/S0020168522080131

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