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Growth and Properties of Nanofilms Produced by the Thermal Oxidation of MnO2/InP under the Effect of Mn3(PO4)2

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Inorganic Materials Aims and scope

Abstract—

MnO2 surface layers and the addition of Mn3(PO4)2 through the gas phase have an advantageous combined effect on the thermal oxidation of InP, increasing the growth rate of the oxide film, ensuring rapid chemical binding of the indium, blocking its diffusion into the film, and activating phosphate formation processes, which leads to the formation of dielectric nanofilms with resistivity as high as 1010 Ω cm.

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ACKNOWLEDGMENTS

In our work, we used equipment at the Shared Research Facilities Center, Voronezh State University.

Funding

This research was supported by the Russian Foundation for Basic Research, project no. 18-03-00354a.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, 394018, Voronezh, Russia

    I. Ya. Mittova, B. V. Sladkopevtsev, A. A. Samsonov, E. V. Tomina, S. Yu. Andreenko & P. V. Kostenko

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  1. I. Ya. Mittova
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  2. B. V. Sladkopevtsev
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  3. A. A. Samsonov
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  4. E. V. Tomina
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  5. S. Yu. Andreenko
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  6. P. V. Kostenko
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Correspondence to I. Ya. Mittova.

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Translated by O. Tsarev

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Mittova, I.Y., Sladkopevtsev, B.V., Samsonov, A.A. et al. Growth and Properties of Nanofilms Produced by the Thermal Oxidation of MnO2/InP under the Effect of Mn3(PO4)2. Inorg Mater 55, 915–919 (2019). https://doi.org/10.1134/S0020168519090073

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