Skip to main content
SpringerLink
Log in

Oriented In3–x S4 films on the (100) surface of Si, GaAs, and InP single crystals

  • Published:
Inorganic Materials Aims and scope

Abstract

Spray pyrolysis of aqueous solutions, with thiourea as a sulfurizing agent, has been used to grow cubic indium sulfide films on single-crystal substrates: In3–x S4(111)/Si(100), In3–x S4(111)/GaAs(100), and In3–x S4(111)/InP(100). The lattice parameter a of the sulfide has been shown to increase with an increase in the lattice parameter of the substrate, whereas the film grown on GaAs has the highest lattice strain (as assessed from X-ray diffraction line broadening). The films have a constant phase composition and (111) texture, in contrast to films grown on glassy substrates by the same method.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Naumov, A.V., Sergeeva, A.V., and Semenov, V.N., Structure and reflection spectra of In3–x S4(111)/mono-Si and In3–x S4(111)/SiO2/mono-Si films, Inorg. Mater., 2015, vol. 51, no. 12, pp. 1205–1212.

    Article  CAS  Google Scholar 

  2. Otto, K., Katerski, A., Mere, A., et al., Spray pyrolysis deposition of indium sulphide thin films, Thin Solid Films, 2011, vol. 519, pp. 3055–3060.

    Article  CAS  Google Scholar 

  3. Spasevska, H., Kitts, C.C., Ancora, C., et al., Optimised In2S3 thin films deposited by spray pyrolysis, Int. J. Photoenergy, 2012, paper 637943.

    Google Scholar 

  4. Barbouch, L., Ben Nasr, T., Kamoun, N., et al., Optical analysis of indium sulphide thin films by spectrophotometry and ellipsometry, Fundamental and Applied Spectroscopy (ISC-2007), Telmini, M., Eds., American Inst. of Phys., 2007, pp. 43–48.

    Google Scholar 

  5. Chate, P.A., Sathe, D.J., and Hankare, P.P., Chemical deposition of (311) textured CdIn2S4 thin films, J. Mater. Sci.: Mater. Electron., 2014, vol. 25, pp. 2292–2296.

    CAS  Google Scholar 

  6. Lincot, D., Kampmann, A., Mokili, B., et al., Epitaxial electrodeposition of CdTe films on InP from aqueous solutions: role of a chemically deposited CdS intermediate layer, Appl. Phys. Lett., 1995, vol. 67, pp. 2355–2357.

    Article  CAS  Google Scholar 

  7. Naumov, A.V., Samofalova, T.V., Semenov, V.N., and Nechaev, I.V., Thiourea complexes in synthesis of Cd1–x -ZnxS solid solutions, Russ. J. Inorg. Chem., 2011, vol. 56, no. 4, pp. 621–627.

    Article  CAS  Google Scholar 

  8. Fuke, S., Araki, H., Kuwahara, K., et al., Indium doping effects on vapor-phase growth of ZnS on GaP, J. Appl. Phys., 1986, vol. 59, pp. 1761–1763.

    Article  CAS  Google Scholar 

  9. Sim, Y., Kim, J., and Seong, M.-J., Simple synthesis of ultra-high quality In2S3 thin films on InAs substrates, J. Alloys Compd., 2016, vol. 685, pp. 518–522.

    Article  CAS  Google Scholar 

  10. Fizicheskie velichiny: Spravochnik (Physical Quantities: A Handbook), Grigor’ev, I.S. and Meilikhov, E.Z., Eds., Moscow: Energoatomizdat, 1991.

  11. Lipson, H. and Steeple, H., Interpretation of X-ray Powder Diffraction Patterns, London: Macmillan, 1970.

    Google Scholar 

  12. Oberhettinger, F., Fourier Transforms of Distributions and Their Inverses (A Collection of Tables), New York: Academic, 1973.

    Google Scholar 

  13. Sánchez-Bajo, F. and Cumbrera, F.L., The use of the pseudo-Voigt function in the variance method of X-ray line-broadening analysis, J. Appl. Crystallogr., 1997, vol. 30, no. 4, pp. 427–430.

    Article  Google Scholar 

  14. Bokii, G.B. and Porai-Koshits, M.A., Rentgenostrukturnyi analiz (X-Ray Structure Analysis), Moscow: Mosk. Gos. Univ., 1964, vol. 1.

    Google Scholar 

  15. Adenis, C., Olivier Fourcade, J., Jumas, J.C., et al., Étude structurale par spectroscopie Mössbauer et rayons X de spinelles lacunaires de type In2S3, Rev. Chim. Miner., 1987, vol. 25, pp. 10–12.

    Google Scholar 

  16. Py, F., Womes, M., Durand, J.M., Olivier Fourcade, J., et al., Copper in In2S3: a study by X-ray diffraction, diffuse reflectance and X-ray absorption, J. Alloys Compd., 1992, vol. 178, pp. 297–304.

    Article  CAS  Google Scholar 

  17. Rampersadh, N.S., Venter, A.M., and Billing, D.G., Rietveld refinement of In2S3 using neutron and X-ray powder diffraction data, Phys. B (Amsterdam, Neth.), 2004, vol. 350, pp. e383–e385.

    Article  CAS  Google Scholar 

  18. Steigman, G.A., Sutherland, H.H., and Goodyear, J., The crystal structure of β-In2S3, Acta Crystallogr., 1965, vol. 19, no. 6, pp. 967–971.

    Article  Google Scholar 

  19. Vol, A.E. and Kagan, I.K., Stroenie i svoistva dvoinykh metallicheskikh sistem (Structure and Properties of Binary Metallic Systems), Moscow: Nauka, 1976, vol. 3.

    Google Scholar 

  20. Bodnar', I.V., Polubok, V.A., Rud’, V.Yu., and Rud’, Yu.V., Photosensitive structures based on In2S3 crystals, Semiconductors, 2003, vol. 37, no. 11, pp. 1308–1310.

    Article  Google Scholar 

  21. Bodnar, I.V. and Gremenok, V.F., Growth and thermal expansion of In2S3 single crystals, Inorg. Mater., 2008, vol. 44, no. 4, pp. 329–332.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    A. V. Naumov & V. N. Semenov

  2. Institute of Volcanology and Seismology, Far East Branch, Russian Academy of Sciences, bul’v. Piipa 9, Petropavlovsk-Kamchatskii, 983006, Russia

    A. V. Sergeeva

Authors
  1. A. V. Naumov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. V. Sergeeva
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. N. Semenov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. V. Naumov.

Additional information

Original Russian Text © A.V. Naumov, A.V. Sergeeva, V.N. Semenov, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 6, pp. 570–577.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Naumov, A.V., Sergeeva, A.V. & Semenov, V.N. Oriented In3–x S4 films on the (100) surface of Si, GaAs, and InP single crystals. Inorg Mater 53, 560–567 (2017). https://doi.org/10.1134/S0020168517060127

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168517060127

Keywords

Search

Navigation